Abstract:
Gallium oxide has recently emerged as a promising semiconductor material for high voltage switch applications owing to its ultra-wide band gap of ~4.8 eV and the corresponding expected critical field strength of ~8MV/cm. β-Ga2O3, which is the most stable polymorph, also has the advantage of melt grown, defect free, large diameter native substrates which are traditionally much more cost effective than vapor phase substrates such as those for incumbent power switching materials like gallium nitride and silicon carbide. Using these substrates, researchers have already developed high quality homoepitaxial channel layers with n-type doping concentrations ranging from 1016 to >1020 cm-3 using group IV materials as dopants. Further, several groups have fabricated metal semiconductor and metal oxide semiconductor field effect transistors (MESFET and MOSFET) using these channel layers with excellent current control and high breakdown voltages
